A Review of SCAPS 1D Simulation Based Optimization Strategies for CIGS Thin Film Solar Cell

Engineering notes

Engineering notes will be added by the Power for Solar editorial team.

Chinese explanation / 中文解读

中文解读待补充：本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。

Original abstract

The considerable research attention drawn to the advantages of copper indium gallium selenide (CIGS) thin-film solar cells, such as high absorption coefficients, tuneable bandgaps, and prolonged durability, is somewhat curbed by the issues of pathway recombination, parasitic optical losses, and poor carrier selectivity at the back contact. The versatility of SCAPS-1D as an optimization tool is attributed to its capacity to analyse and systematically optimize absorber thickness, band alignment, defect density, and back-surface-field (BSF) architecture prior to empirical testing. This study provides insights into the growing body of research utilizing SCAPS pertaining to CIGS and other chalcogenide-based photovoltaics, concerning device architectures with BSF layers (of PEDOT:PSS, Sb2Se3, NiO, and Cu2O) and unconventional buffer layers (3C-SiC, MoS2, and ZnMnO) [1-7]. Temperature dependence, defect state modelling, and back contact work function studies assist in better understanding absorber physics and charge transport at interfaces [8-17]. The studies’ findings conclude that wide bandgap transparent buffers and engineered BSF layers lead to lower recombination losses, superior carrier selectivity, and improved open circuit voltage (Voc), fill factor (FF), and enhanced overall conversion efficiency as a fusion of prior studies. This study provides a broad scope of essential performance data, numerical analysis, and the principles of optimization to guide our focus to the imminent improvements of high-efficiency CIGS devices.

Links and sources

Comments