COUPLED EFFECTS OF DOPING AND TEMPERATURE ON THE PHOTOVOLTAIC PARAMETERS OF DOUBLE-JUNCTION InGaN SOLAR CELLS UNDER TROPICAL CONDITIONS

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Original abstract

The deployment of photovoltaic technology in tropical climates is limited by the sensitivity of silicon solar cells to high temperatures.Indium gallium nitride, whose bandgap can be tuned, represents a promising alternative.This analytical and numerical study investigates the combined effects of doping concentration and temperature on the performance of a double-junction indium gallium nitride solar cell.The model accounts for bandgap narrowing and the degradation of charge carrier mobility.The results show that the short-circuit current is governed by two competing mechanisms: enhanced light absorption and degraded charge carrier transport.At high doping concentrations, the reduction in diffusion lengths becomes dominant, leading to a decrease in the short-circuit current.The open-circuit voltage reaches a maximum at an intermediate doping concentration before decreasing because of the exponential increase in saturation current.Under elevated tropical temperatures, the open-circuit voltage decreases almost linearly, whereas the short-circuit current increases slightly at high doping concentrations.Coupled Effects of Doping and Temperature on The Photovoltaic Parameters of Double-Junction InGaN Solar Cells Under Tropical Conditions https://iaeme.com/Home/

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