Crystallinity and optical properties of Cu2FeSn3S8 thin films prepared by pulsed laser deposition

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Original abstract

The rapid development of tandem photovoltaics is propelled by advances in the halide perovskite top cells. However, their widespread industrial implementation is hindered by practical challenges, such as material scarcity, toxicity, and limited chemical and structural instability. In this context, certain poly-chalcogenide compounds have emerged as potential alternatives, comprising abundant, non-toxic elements and exhibiting overall higher stability. Here, we report the synthesis and characterization of quaternary chalcogenide Cu2FeSn3S8 thin films prepared by Pulsed Laser Deposition (PLD) on soda-lime glass substrates, followed by post-deposition annealing. X-ray diffraction and Raman spectroscopy demonstrate that post-deposition annealing at 400°C for 1 hour in N2 atmosphere triggers conversion of as-deposited amorphous films into a partially crystalline films described by thiospinel structure (Fd¯3m space group) within micron-size vicinity confirmed by Raman mapping. Notably, as confirmed by EDS compositional analysis and XRD Rietveld refinement, the cubic thiospinel phase remains stable within a range of Cu/Fe/Sn molar ratios, achieved by varying the target composition, accompanied by a corresponding shift in the lattice parameter a. The optoelectronic measurements revealed a finite carrier mobility, photosensitivity, and the optical bandgap within the range of 1.46-1.52 eV, along with enhanced optical absorption coefficient upon annealing. These results highlight Cu2FeSn3S8 as a promising, non-toxic, abundant, and efficient candidate for absorbers in solar cell applications.

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