Design and Optimization of Lead-Free Chalcogenide Perovskite Solar Cells: 30.64% Efficiency with MgHfS₃ Absorber

Engineering notes

Engineering notes will be added by the Power for Solar editorial team.

Chinese explanation / 中文解读

中文解读待补充：本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。

Original abstract

This study presents a numerical simulation of an inorganic, lead-absent chalcogenide perovskite with the configuration FTO/ZrS₂/MgHfS₃/SnS/Pt, utilizing the SCAPS-1D simulator. The device employs MgHfS₃ as the absorber layer due to its promising bandgap of 1.43 eV and enhanced moisture stability. The effects of light-harvesting layer thickness and doping levels of the electron transport layer (ZrS₂) and hole transport layer (SnS) were systematically investigated to optimize photovoltaic performance. The results demonstrate that an absorber thickness of 1.1 μm and doping concentrations of 10¹⁹ cm⁻³ for both ETL and HTL yield a maximum power conversion efficiency of 30.64% at a defect density of 1015 cm⁻³, with an open-circuit voltage (VOC) of 1.1611 V, short-circuit current density (JSC) of 31.19 mA/cm², and fill factor (FF) of 84.6%. The impact of operating temperature was also analyzed, revealing a slight decline in performance with increasing temperature. These findings highlight the potential of MgHfS₃-based chalcogenide perovskite solar cells as a stable and efficient alternative to conventional perovskite solar cells, offering a pathway toward sustainable and high-performance photovoltaic technology.

Links and sources

• PDF from original source

Comments