Effect of plasma surface treatment on the performance of IWO(In₂O₃:W)/Si heterojunction photodetectors

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Original abstract

Abstract This work investigates the modulation of optoelectronic properties in IWO(In₂O₃:W)/Si heterojunction photodetectors via O₂ and Ar plasma treatments. With increasing O₂ plasma exposure time, the dark current exhibits a non-monotonic trend, initially decreasing before subsequently rising. A minimum dark current of 4.9 × 10⁻⁷ A is achieved following a 10-minute treatment. This reduction is attributed to the passivation of oxygen vacancies within the film by the oxygen plasma, which effectively lowers both the carrier concentration and defect density. Conversely, extending the O₂ treatment to 15 minutes inverts this behavior, characterized by a pronounced escalation in dark current and a concomitant attenuation of the photocurrent. In contrast, Ar plasma treatment enhances the response speed of the photodetectors, a phenomenon that may be correlated with the concomitant increase in dark current. Specifically, a 15-minute exposure reduces both rise and fall times to 6.9 ms and 4.6 ms, respectively, down from the pristine values of 9.9 ms and 6.2 ms. This elevation in dark current stems primarily from the desorption of oxygen atoms and the subsequent formation of oxygen vacancy defects. Oxygen vacancies serve a dual role as carrier donors and recombination centers, which promotes carrier generation and recombination and ultimately expedites the photodetection response. These results suggest that tailored plasma processing and precise temporal control offer a viable strategy for tuning IWO film properties, holding promise for high-performance photodetectors.

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