Extreme-environment-resilient MoWS2/HfOx heterojunction photonic memristor crossbar arrays for neuromorphic computing

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Chinese explanation / 中文解读

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Original abstract

Abstract We report environmentally robust optoelectronic memristive devices based on an ITO/MoWS2/HfOx/Pt heterostructure for neuromorphic computing applications. Individual dot-point devices exhibit stable bipolar resistive switching with an ON/OFF ratio of ~1k and retention exceeding 10k s, alongside broadband, photo-tunable responsivity across the visible spectrum (405–785 nm), enabling wavelength-dependent synaptic modulation. To address scalability and device performance, 10 µm² crossbar arrays were developed, demonstrating endurance beyond 100k cycles and reliable operation under harsh conditions, including temperatures up to 200 °C and aqueous environments. Notably, the proposed crossbar platform combines high-temperature operation, direct water-exposure resilience, broadband optoelectronic functionality, and neuromorphic behavior within a single heterojunction architecture. The crossbar array devices show intrinsic time-dependent photoresponse decay that follows a single-exponential relaxation, providing a hardware-level analogue of synaptic forgetting. Based on these characteristics, a binary neural network simulation for image-diminishing tasks achieves a classification accuracy of 91.76%. These results establish the MoWS2/HfOₓ heterostructure as a promising platform for resilient, multifunctional, and time-adaptive neuromorphic hardware.

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