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High-Efficiency UVB Photodetector Based on Vacuum Thermal Evaporated Rb2CuBr3/n-Si Heterojunction
One-line summary
A solar energy research paper on High-Efficiency UVB Photodetector Based on Vacuum Thermal Evaporated Rb2CuBr3/n-Si Heterojunction.
Engineering notes
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Chinese explanation / 中文解读
中文解读待补充：本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。
Original abstract
Abstract Mid-wave ultraviolet (UVB) photodetectors operate within the wavelength range of 280–320 nm, converting UVB radiation into electrical signals. Advancements in materials science have led to the outstanding performance of UVB devices, resulting in their wide applicability in military surveillance, industrial safety, biomedicine and environmental monitoring. Among emerging wide-bandgap halide perovskites, Rb2CuBr3 exhibits strong sensitivity in the UVB spectrum, making it an ideal material for UVB detection. This study presents a feasible and cost-effective method for fabricating Rb2CuBr3 thin films via vacuum thermal evaporation for manufacturing UVB detectors. The fabricated Rb2CuBr3/n-Si heterojunction photodetector exhibits outstanding UVB detection performance under 290-nm illumination, achieving a peak responsivity of 20.51 mA/W, a detectivity of 8.68 × 1010 Jones, and rapid response rise and fall times of 20 and 14 ms, respectively, in the current–time curve. The photodetector shows excellent operational stability over 50 on-off cycles. These results highlight the substantial potential of Rb2CuBr3 for fabricating high-performance UVB photodetectors.
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