Improved Heat Dissipation in CsPbBr${_3}$-hBN Heterostructures

Engineering notes

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Original abstract

Metal halide perovskite semiconductors are promising materials for optoelectronic and photonic devices, including solar cells and next-generation coherent light sources. However, their low thermal conductivity limits the practical operation of devices under high excitation levels. Integrating thermally conductive, large band-gap two-dimensional (2D) materials into perovskite devices could suppress heat accumulation, while preserving their optical properties. Here, we show that planar hot-pressed (PHP) cesium lead bromide (CsPbBr${_3}$) thin films capped with few-layer 2D hexagonal boron nitride (hBN) are less affected by laser-induced heating under high-power continuous-wave excitation than uncapped perovskite samples. A large-scale semidry transfer method was developed to integrate 2D hBN onto PHP CsPbBr${_3}$ thin films. The process is chemically and thermally compatible with perovskites. Microscopic and spectroscopic analyses show that the hBN capping layer does not alter the morphology and optical properties of the perovskite thin film. The PHP CsPbBr${_3}$-hBN heterostructure exhibits a thermal conductivity of 3 W/(m * K), approximately seven times higher than that of the bare perovskite films of 0.45 W/(m * K). Heat diffusion simulations confirm enhanced heat dissipation in the heterostructure relative to bare perovskite films. Our experiments demonstrate an effective approach to enhancing heat dissipation in perovskite devices using transparent, thermally conductive 2D materials.

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