Improving perovskite solar cell performance: Where we stand and what's next?

Engineering notes

Engineering notes will be added by the Power for Solar editorial team.

Chinese explanation / 中文解读

中文解读待补充：本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。

Original abstract

Perovskite solar cells (PSCs) have emerged as highly promising candidates for next-generation photovoltaic technologies due to their remarkable power conversion efficiencies, low-cost fabrication routes, and tunable optoelectronic properties. However, their practical commercialization remains constrained by several critical challenges, including charge-carrier recombination, interface-related energy losses, environmental instability, and lead-associated concerns. This review presents a focused and updated analysis of advanced charge-carrier management strategies designed to address these limitations. Unlike broader PSC reviews, particular emphasis is placed on the coupled roles of carrier lifetime, mobility, and interface quality as fundamental determinants of device efficiency and long-term operational stability. Special attention is devoted to inverted p-i-n architectures, where buried hole-selective contacts, self-assembled monolayers, NiOx-based interlayers, and fullerene-derived electron-selective contacts increasingly govern voltage losses, extraction balance, operational durability, and scalability. Recent developments are discussed through the interconnected effects of buried-interface passivation, transport-layer energetics, crystallization control, and transient/steady-state characterization methods used to quantify non-radiative recombination and transport limitations. The scalability and reproducibility of these approaches are further evaluated under realistic operating conditions. Analysis of recent representative studies indicates that further improvements in PSC performance are increasingly limited not by intrinsic absorber properties alone, but by interfacial recombination, contact non-uniformity, and the long-term stability of carrier-selective interfaces under thermal, electrical, and operational stress. Recent evidence suggests that further progress in PSC technology will increasingly depend on integrated control of charge-carrier dynamics across buried interfaces, transport layers, and scalable device architectures, particularly in formamidinium-rich and inverted p-i-n systems that currently represent the most promising platforms for durable high-efficiency photovoltaics.

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