ITO_CdS_Sb2Se3_Mo

Engineering notes

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Chinese explanation / 中文解读

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Original abstract

This dataset contains the numerical simulation results used to analyze and optimize an ITO/CdS/Sb₂Se₃/Mo thin-film solar cell using SCAPS-1D. The calculations were performed to evaluate the influence of rear-contact work function, Sb₂Se₃ absorber thickness, CdS buffer-layer thickness, Sb₂Se₃ bulk defect density, and Sb₂Se₃ acceptor concentration on the photovoltaic response of the device. The dataset includes dark and illuminated J–V curves, photovoltaic parameters, energy-band diagrams, generation-rate profiles, SRH recombination-rate profiles, and electric-field distributions. The main photovoltaic figures of merit extracted from the simulations are open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency. The reference device corresponds to the ITO/CdS/Sb₂Se₃/Mo structure under AM1.5G illumination at 100 mW cm⁻² and 300 K. The optimized numerical configuration was obtained by combining the most favorable design conditions identified from the parameter sweeps, including improved absorber thickness, reduced Sb₂Se₃ bulk defect density, and adjusted acceptor concentration.

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