Solar energy paper index

Laser ablation XPS depth profiling of indium phosphide: optimisation of ablation rate and effects of laser pulse duration on stoichiometry

2026-07-24 · Applied Physics A

One-line summary

A solar energy research paper on Laser ablation XPS depth profiling of indium phosphide: optimisation of ablation rate and effects of laser pulse duration on stoichiometry.

Engineering notes

Engineering notes will be added by the Power for Solar editorial team.

Chinese explanation / 中文解读

中文解读待补充:本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。

Original abstract

Abstract Femtosecond laser ablation XPS (fs-LA XPS) is a recently developed approach to XPS depth profiling. Developing an understanding of laser pulse duration variation in retaining or modifying the true material stoichiometry during profiling is crucial to the advancement of this new field. Laser ablation XPS depth profiles have been performed on bulk InP using a 1030 nm laser employing a top-hat beam shaper and pulse duration from 160 fs to 6 ps. Per ablation level in the profile, both single pulse (above the single-pulse ablation threshold) and multi-pulse (below the single-pulse ablation threshold) profiling approaches have been studied. XPS depth profiles performed using single pulses showed a clear P enrichment. Following multiple ablations, SEM images from the ablation crater exhibited many globules present on the surface. Energy dispersive X-ray spectroscopy (EDS) analysis identified the globules as being In rich, whilst Auger electron spectroscopy (AES) confirmed the presence of a P enriched general surface. The true InP stoichiometry during XPS depth profiling could be preserved using a multi-pulse regime for a pulse duration of 160 fs but deviation from the true stoichiometry occurred for pulse durations ≥ 1 ps, indicative of a transition to a thermal ablation process. The InP laser-induced ablation threshold (LIAT) was determined using a volume regression method for single- and various multi-pulse regimes. For the latter, the accumulated LIAT fluence increased linearly with the number of laser pulses. The ablation depth and ablation rate were studied as a function of laser fluence for different multi-pulse regimes. At low accumulated fluences, both parameters can be approximated to a logarithmic relationship, particularly for lower pulse numbers per irradiation sequence. For fluences above 0.52 J/cm 2 , the dependence follows a linear relationship. The ablation depth for a total accumulated fluence of 1.03 J/cm 2 per ablation level obtained using different values of laser fluence and numbers of pulses was found to be independent of the parameters varied and increased linearly with the number of ablation levels.

5.0Engineering value
7.0Research novelty
4.0Business relevance

Links and sources

Need this topic turned into a technical roadmap?

Power for Solar can prepare a custom solar energy literature review, simulation code map, dataset map, and B2B photovoltaic technology assessment.

Request B2B research

Comments

No comments yet. Be the first to share your thoughts on this paper.
Login or register to leave a comment