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Lead-Free Sr<sub>3</sub>MCl<sub>3</sub> (M = Sb, P)Perovskite Solar Cells: from First-Principles Calculations to Recombination-AwareDevice Simulations

2026-06-17 · Figshare

One-line summary

A solar energy research paper on Lead-Free Sr<sub>3</sub>MCl<sub>3</sub> (M = Sb, P)Perovskite Solar Cells: from First-Principles Calculations to Recombination-AwareDevice Simulations.

Engineering notes

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Chinese explanation / 中文解读

中文解读待补充:本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。

Original abstract

In this study, first-principles calculations were performed to explore structural, mechanical, electronic, carrier transport, and optical properties of strontium-based perovskites (Sr<sub>3</sub>MCl<sub>3</sub> (M = Sb, P)) using density functional theory (DFT). These calculations reveal that both materials are thermodynamically and mechanically stable. Employing the GGA-PBE functional, they possess a direct-band-gap semiconductor behavior with an energy of 1.704 eV (Sr<sub>3</sub>SbCl<sub>3</sub>) and 1.677 eV (Sr<sub>3</sub>PCl<sub>3</sub>). The analysis of the density of states (DOS) further corroborates the semiconducting behavior. Carrier mobility calculations indicate that electron/hole mobilities of 89.15/110.52 cm<sup>2</sup>/V·s are achieved for Sr<sub>3</sub>SbCl<sub>3</sub> and 137.16/100.60 cm<sup>2</sup>/V·s for Sr<sub>3</sub>PCl<sub>3</sub>. In the visible region, a light absorption coefficient above 10<sup>5</sup> cm<sup>–1</sup> is reached for both materials, highlighting their suitability as an absorber layer (AL) in perovskite solar cells (PSCs). Considering band-to-band recombination (radiative and Auger), SCAPS-1D was used to conduct an inquiry into the photovoltaic performance of various devices, integrating different electron and hole transport layers (ETL/HTL): Ag/FTO/ETL/<i>uniform</i>-AL/HTL/Ni. Among all configurations examined in this study, the Ag/FTO/IGZO/uniform-AL/Cu<sub>2</sub>O/Ni architecture achieves the highest photovoltaic performance parameters, upon optimization of AL thickness, AL-doping concentration, AL-bulk and interface defect densities, radiative recombination coefficient, and series/shunt resistances. The Sr<sub>3</sub>SbCl<sub>3</sub>-based PSC (Device I) attains a power conversion efficiency (PCE) of ∼25.80%, with an open-circuit voltage (<i>V</i><sub>OC</sub>) of 1.31 V, a short-circuit current density (<i>J</i><sub>SC</sub>) of 21.82 mA/cm<sup>2</sup>, and a fill factor (FF) of 90.27%, whereas the Sr<sub>3</sub>PCl<sub>3</sub>-based PSC (Device II) achieves a PCE of approximatively 26.22%, with <i>V</i><sub>OC</sub> = 1.28 V, <i>J</i><sub>SC</sub> = 22.71 mA/cm<sup>2</sup>, and FF = 90.09%. Finally, replacing the single <i>uniform</i>-AL with a <i>graded</i>-Sr<sub>3</sub>Sb<sub>1–<i>x</i></sub>P<sub><i>x</i></sub>Cl<sub>3</sub> AL (Device III), adopting linear and parabolic graded physical parameters, does not demonstrate marked improvements in device performance. Consequently, this study positions Sr<sub>3</sub>MCl<sub>3</sub> (M = Sb, P) perovskites as alternatives to lead-based ALs, which can constitute a suitable pathway for real-time experimentation of PSC.

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