Photoelectric conversion performance of GeSn (0.524 eV) single-heterojunction thermophotovoltaic cells

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Chinese explanation / 中文解读

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Original abstract

Abstract A simulation analysis of a 0.524 eV GeSn/Ge single heterojunction thermophotovoltaic cell has been conducted based on the excellent photovoltaic properties of GeSn and the theory of P/n-heterojunction solar cells. The cell structure has been optimized in accordance with the experimental material characteristics, and the photovoltaic performance of the cell has been thoroughly investigated. The results indicate that the cell exhibits excellent photovoltaic performance when the doping concentration N a/d in the P(n)-type region of the cell is N a/d = 113(1)×10 17 cm −3 , with a maximum photovoltaic efficiency exceeding 8.3%. To simultaneously achieve low material costs and high cell performance, the cell emitter (base) thickness can be set to 3.8 (2.7~3.4) μm, the cell finger gap d G can be controlled within the range of 50~60 μm, and the surface recombination velocity S F/B can be maintained below 10 3 cm/s. Under these conditions, the cell efficiency η is optimized and stabilized at 9.2% (T BB = 1500 K). Within the spectral range of 1000~2500 K, the 0.524 eV GeSn/Ge single heterojunction thermophotovoltaic cell achieved a maximum efficiency of 11.4% at 2000 K. The findings of this study can provide technical guidance for the design and fabrication of high-efficiency, cost-effective GeSn-based heterojunction thermophotovoltaic cells, offering a new direction for the research and development of low-cost thermophotovoltaic cells.

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