Polarizing ultrathin ferroelectric BaTiO3 films through interfacial layer polarization

Engineering notes

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Chinese explanation / 中文解读

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Original abstract

An important requirement for the integration of ferroelectric thin films into devices is deterministic control of the polarization state in films of only a few unit cells in thickness. Here, we utilize the charged atomic planes of (001)-oriented SmNiO$_3$ (SNO) buffer layers as a polarizing template to stabilize the polarization in ferroelectric BaTiO$_3$ (BTO) model system thin films. We show that an upwards (downwards) oriented polarization is achieved by selection of the [SmO]$^+$ ([NiO$_2$]$^-$) buffer termination. Most importantly, the charged atomic planes of SNO suppress the depolarizing-field-induced critical thickness in BTO, and we record the emergence of a net polarization in our BTO films from the first unit cell deposited. Our experiments, guided by density-functional-theory (DFT) calculations, further highlight the impact of charged defects on the polarizing effectiveness of the SNO buffer. Specifically, oxygen vacancies counteract the polarizing field of the negatively charged, [NiO$_2$]$^-$-terminated surface of the SNO buffer. Our findings provide important insights into the interplay of defect chemistry and polarizing interfaces to stabilize ferroelectric polarization down to the single-unit-cell limit.

Links and sources

• Official / arXiv page
• PDF from original source

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