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Tailoring the properties of YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films by 30 keV He$^+$ irradiation: An enabling route to superconducting device nanopatterning
One-line summary
A solar energy research paper on Tailoring the properties of YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films by 30 keV He$^+$ irradiation: An enabling route to superconducting device nanopatterning.
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Chinese explanation / 中文解读
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Original abstract
Focused helium ion beam (He-FIB) irradiation with 30 keV ions is a key tool for nanoscale patterning and defect engineering in high transition temperature (Tc) cuprate superconducting devices, yet its usable fluence window is constrained by the competing requirements of reliable superconductivity suppression and minimal structural degradation. In this work, we provide a comprehensive dataset on the effects of large-area 30 keV He+ ion exposure on the electric transport and superconducting properties of epitaxial YBa2Cu3O7 (YBCO) thin films. X-ray diffraction shows a fluence-driven loss of crystalline order accompanied by an out-of-plane lattice expansion and an orthorhombic-to-tetragonal transition, culminating at predominant amorphization at the highest fluence of 1 x 10^16 cm^-2. Raman spectra exhibit increasing disorder while lacking signatures of oxygen depletion, indicating that irradiation mainly generates oxygen-related Frenkel defects rather than changing the carrier concentration. Consistently, with increasing fluence, the normal-state resistivity ρ_N(T) at temperature T above Tc increases strongly, while d ρ_N/d T remains nearly unchanged at moderate fluence. The suppression of Tc is accurately described by Abrikosov-Gor'kov pair breaking and reaches complete quenching of superconductivity at 4.5 x 10^15 cm^-2. The anisotropic upper critical fields decrease approximately exponentially with increasing fluence, the vortex activation energy is reduced, and the anisotropy drops, in contrast to oxygen-depleted YBCO. Hall-angle analysis confirms a nearly constant carrier density but a systematic increase in defect scattering and reduced mobility, consistent with a crossover toward the dirty limit at high fluence. These results establish quantitative fluence thresholds and a practical operational window for He-FIB nanopatterning of YBCO quantum circuits.
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