Ultrabright Near-Infrared Lead-Free Perovskite Light-Emitting Diodes with Negligible Efficiency Roll-Off

Engineering notes

Engineering notes will be added by the Power for Solar editorial team.

Chinese explanation / 中文解读

中文解读待补充：本站会优先为光伏效率、钙钛矿太阳能电池、储能技术、太阳能热利用、BIPV、并网技术等高价值论文补充中文说明。

Original abstract

High Resolution Image Download MS PowerPoint Slide Lead-free halide perovskite semiconductors show great promise for light-emitting diodes (LEDs), benefiting from tunable optoelectronic properties and solution processability. However, their practical applications in high-current-density LEDs are fundamentally constrained by severe efficiency roll-off, primarily caused by nonradiative recombination and carrier-induced structural instabilities. In this study, we introduce a molecular N, N ′-diphenylthiourea (DPTA)-engineered tin perovskite semiconductor (CsSnI 3 ) that achieves a photoluminescence quantum efficiency (PLQE) of 36% at a carrier concentration of 10 18 cm –3 . Our approach enables precise control over the charge-carrier concentration and lattice growth. High-resolution transmission electron microscopy further demonstrates that the uniform local strain distribution in the doped films enhances carrier wave-function overlap, leading to a substantial boost in PLQE. Leveraging the enhanced optoelectronic properties of DPTA-treated CsSnI 3, we fabricate near-infrared LEDs that exhibit an external quantum efficiency (EQE) of 13.4% and an unprecedented peak radiance of 1248 W sr –1 m –2, with minimal efficiency roll-off even at high current densities exceeding 3500 mA cm –2 in pulse-mode operation. This work introduces a new material-doping strategy for lead-free perovskites, demonstrating their potential for high-power optoelectronic applications and advancing the feasibility of electrically pumped perovskite laser diodes.

Links and sources

• PDF from original source

Comments