Universal buried-interface engineering via a multifunctional interlayer for Pb- and Sn-halide perovskite solar cells

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Chinese explanation / 中文解读

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Original abstract

In inverted (p-i-n) perovskite solar cells (PSCs), hole-selective contacts govern both perovskite crystallization and hole extraction. However, developing broadly applicable interlayers remains challenging because perovskite absorbers and hole-transport materials possess diverse energetics and surface chemistries. Here, we introduce TPA-PO (triphenylamine-phosphine oxide), a linear donor-acceptor (D-A) arylamine-phosphine oxide small molecule, as a universal hole-selective interlayer for chemically distinct wide-band-gap Pb- and Pb-free Sn-halide perovskite systems. TPA-PO coordinates with undercoordinated Pb 2+ /Sn 2+ sites, regulates interfacial crystallization, and enhances the built-in potential, thereby suppressing defect-mediated recombination and facilitating hole extraction. Consequently, TPA-PO increases the power conversion efficiency of wide-band-gap Pb-based PSCs from 20.1% to 21.0% and that of Sn-based PSCs from 13.6% to 15.6%. Moreover, the modified devices retain approximately 90% of their initial efficiencies after 500 h, demonstrating a transferable strategy for efficient and stable perovskite photovoltaics.

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