UV-Induced Interfacial Passivation via a Diacrylate Monomer for Stable Perovskite Solar Cells

Engineering notes

Engineering notes will be added by the Power for Solar editorial team.

Chinese explanation / 中文解读

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Original abstract

Effective passivation of the buried interface is essential for achieving high performance and operational stability in perovskite solar cells (PSCs), as interfacial defects at the SnO 2 /perovskite interface induce non-radiative recombination and limit device efficiency. Here, a photopolymerizable diacrylate-based interfacial modifier, 1,4-bis[4-(6-acryloyloxyhexyloxy)benzoyloxy]-2-methylbenzene (RM82), is introduced to engineer the buried interface via UV-induced crosslinking. The resulting crosslinked layer reduces interfacial defect density and promotes perovskite crystallization, thereby suppressing recombination losses and facilitating charge extraction. Consequently, PSCs incorporating the RM82-modified interface achieve power conversion efficiencies (PCEs) exceeding 24% and exhibit enhanced environmental stability, retaining over 90% of their initial efficiency after storage under ambient conditions without encapsulation. This work demonstrates an effective interfacial passivation strategy for simultaneously improving the efficiency and stability of PSCs.

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